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EPC2101

EPC2101

EPC2101

EPC

TRANS GAN ASYMMETRICAL HALF BRID

SOT-23

EPC2101 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series eGaN®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA, 2.5V @ 12mA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 30V 1200pF @ 30V
Current - Continuous Drain (Id) @ 25°C 9.5A 38A
Gate Charge (Qg) (Max) @ Vgs 2.7nC @ 5V, 12nC @ 5V
Drain to Source Voltage (Vdss) 60V
FET Feature GaNFET (Gallium Nitride)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $4.77400 $2387
1,000 $4.31200 $4.312

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