SIA975DJ-T1-GE3

new-10%

Manufacturer part number:SIA975DJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET -12V [email protected] 4.5A P-Ch G-III

Case Package:SOT-23

Datasheet:SIA975DJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	41mOhm
Subcategory	Other Transistors
Max Power Dissipation	7.8W
Base Part Number	SIA975
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	41m Ω @ 4.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	26nC @ 8V
Rise Time	22ns
Drain to Source Voltage (Vdss)	12V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	32 ns
Continuous Drain Current (ID)	4.5A
Threshold Voltage	-400mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free