HS8K11TB

new-10%

Manufacturer part number:HS8K11TB

Manufacturer:ROHM Semiconductor

Description:MOSFET 2N-CH 30V 7A/11A HSML

Case Package:SOT-23

Datasheet:HS8K11TB Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-UDFN Exposed Pad
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Max Power Dissipation	2W
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	S-PDSO-N8
Number of Elements	2
Configuration	COMPLEX
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN SOURCE
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	17.9m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 15V
Current - Continuous Drain (Id) @ 25°C	7A 11A
Gate Charge (Qg) (Max) @ Vgs	11.1nC @ 10V
Drain to Source Voltage (Vdss)	30V
Continuous Drain Current (ID)	11A
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.0291Ohm
Pulsed Drain Current-Max (IDM)	28A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	3.6 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant