IMH4AT110

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IMH4AT110

Manufacturer part number:IMH4AT110

Manufacturer:ROHM Semiconductor

Description:IMH4AT110 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ROHM Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:IMH4AT110 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	7 Weeks
Mount	Surface Mount
Package / Case	SMD/SMT
Number of Pins	6
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	DIGITAL
HTS Code	8541.21.00.75
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	50V
Max Power Dissipation	300mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
Time@Peak Reflow Temperature-Max (s)	10
Pin Count	6
Max Output Current	100mA
Operating Supply Voltage	50V
Number of Elements	2
Polarity	NPN
Element Configuration	Dual
Power Dissipation	300mW
Transistor Application	SWITCHING
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	250MHz
Max Breakdown Voltage	50V
Emitter Base Voltage (VEBO)	5V
hFE Min	100
DC Current Gain-Min (hFE)	100
Continuous Collector Current	100mA
VCEsat-Max	0.3 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free