SQJ504EP-T1_GE3

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Manufacturer part number:SQJ504EP-T1_GE3

Manufacturer:Vishay Siliconix

Description:SQJ504EP-T1_GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available on our website

Case Package:SOT-23

Datasheet:SQJ504EP-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	34W Tc
FET Type	N and P-Channel
Rds On (Max) @ Id, Vgs	7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 25V 4600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V, 85nC @ 10V
Drain to Source Voltage (Vdss)	40V
FET Feature	Standard
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
3,000	$0.62976	$1.88928
6,000	$0.60019	$3.60114
15,000	$0.57907	$8.68605

SQJ504EP-T1_GE3 Description

SQJ504EP-T1_GE3 developed by Vishay Siliconix is a type of MOSFET which is a field-effect transistor that uses the effect of electric field to control the semiconductor (S) through the gate of the metal layer (M) through the oxide layer (O). Its characteristic is to use the gate voltage to control the drain current. Its input terminal is connected to a high level or a low level (usually a high level), and a voltage drop Vce will be generated when the current Ib flows through the MOSFET. The size of this voltage drop is determined by the forward conduction angle of the P-type and N-type diodes. size to decide.