QST5TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
QST5TR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.25W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
QST
Pin Count
6
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
280MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
370mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 200mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
370mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage
30V
Current - Collector (Ic) (Max)
2A
Transition Frequency
280MHz
Collector Emitter Saturation Voltage
-180mV
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
-6V
hFE Min
270
Continuous Collector Current
-2A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.721525
$1.721525
10
$1.624080
$16.2408
100
$1.532151
$153.2151
500
$1.445425
$722.7125
1000
$1.363609
$1363.609
QST5TR Product Details
QST5TR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 200mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -180mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 370mV @ 75mA, 1.5A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.Keeping the emitter base voltage at -6V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
QST5TR Features
the DC current gain for this device is 270 @ 200mA 2V a collector emitter saturation voltage of -180mV the vce saturation(Max) is 370mV @ 75mA, 1.5A the emitter base voltage is kept at -6V a transition frequency of 280MHz
QST5TR Applications
There are a lot of ROHM Semiconductor QST5TR applications of single BJT transistors.