QST5TR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 200mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -180mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 370mV @ 75mA, 1.5A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.Keeping the emitter base voltage at -6V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
QST5TR Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at -6V
a transition frequency of 280MHz
QST5TR Applications
There are a lot of ROHM Semiconductor QST5TR applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting