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QST5TR

QST5TR

QST5TR

ROHM Semiconductor

QST5TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

QST5TR Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.25W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Base Part Number QST
Pin Count 6
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 280MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 370mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 370mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage 30V
Current - Collector (Ic) (Max) 2A
Transition Frequency 280MHz
Collector Emitter Saturation Voltage -180mV
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -6V
hFE Min 270
Continuous Collector Current -2A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.721525 $1.721525
10 $1.624080 $16.2408
100 $1.532151 $153.2151
500 $1.445425 $722.7125
1000 $1.363609 $1363.609
QST5TR Product Details

QST5TR Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 200mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -180mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 370mV @ 75mA, 1.5A.Single BJT transistor is recommended to keep the continuous collector voltage at -2A in order to achieve high efficiency.Keeping the emitter base voltage at -6V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

QST5TR Features


the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at -6V
a transition frequency of 280MHz

QST5TR Applications


There are a lot of ROHM Semiconductor QST5TR applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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