BUJ105AD,118 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
BUJ105AD,118 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Reference Standard
IEC-60134
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
80W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
13 @ 500mA 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
1V @ 800mA, 4A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
8A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.287040
$3.28704
10
$3.100981
$31.00981
100
$2.925454
$292.5454
500
$2.759862
$1379.931
1000
$2.603644
$2603.644
BUJ105AD,118 Product Details
BUJ105AD,118 Overview
This device has a DC current gain of 13 @ 500mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The device exhibits a collector-emitter breakdown at 400V.
BUJ105AD,118 Features
the DC current gain for this device is 13 @ 500mA 5V the vce saturation(Max) is 1V @ 800mA, 4A
BUJ105AD,118 Applications
There are a lot of WeEn Semiconductors BUJ105AD,118 applications of single BJT transistors.