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BUJ105AD,118

BUJ105AD,118

BUJ105AD,118

WeEn Semiconductors

BUJ105AD,118 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ105AD,118 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Terminal FormGULL WING
Reach Compliance Code not_compliant
Reference Standard IEC-60134
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 13 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 4A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 8A
RoHS StatusRoHS Compliant
In-Stock:4993 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.287040$3.28704
10$3.100981$31.00981
100$2.925454$292.5454
500$2.759862$1379.931
1000$2.603644$2603.644

BUJ105AD,118 Product Details

BUJ105AD,118 Overview


This device has a DC current gain of 13 @ 500mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The device exhibits a collector-emitter breakdown at 400V.

BUJ105AD,118 Features


the DC current gain for this device is 13 @ 500mA 5V
the vce saturation(Max) is 1V @ 800mA, 4A

BUJ105AD,118 Applications


There are a lot of WeEn Semiconductors BUJ105AD,118 applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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