BD534J datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD534J Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BD534
Power - Max
50W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2A 2V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
800mV @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
12MHz
BD534J Product Details
BD534J Overview
In this device, the DC current gain is 30 @ 2A 2V, which is the ratio between the base current and the collector current.When VCE saturation is 800mV @ 600mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Supplier device package TO-220-3 comes with the product.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BD534J Features
the DC current gain for this device is 30 @ 2A 2V the vce saturation(Max) is 800mV @ 600mA, 6A the supplier device package of TO-220-3
BD534J Applications
There are a lot of ON Semiconductor BD534J applications of single BJT transistors.