DZT3150-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DZT3150-13 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DZT3150
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 4A
Collector Emitter Breakdown Voltage
25V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
7V
hFE Min
50
Continuous Collector Current
5A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$19.050720
$19.05072
10
$17.972377
$179.72377
100
$16.955073
$1695.5073
500
$15.995352
$7997.676
1000
$15.089955
$15089.955
DZT3150-13 Product Details
DZT3150-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 500mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at 5A for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.In this part, there is a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 25V volts.During maximum operation, collector current can be as low as 5A volts.
DZT3150-13 Features
the DC current gain for this device is 250 @ 500mA 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 200mA, 4A the emitter base voltage is kept at 7V a transition frequency of 150MHz
DZT3150-13 Applications
There are a lot of Diodes Incorporated DZT3150-13 applications of single BJT transistors.