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DZT3150-13

DZT3150-13

DZT3150-13

Diodes Incorporated

DZT3150-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DZT3150-13 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DZT3150
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 4A
Collector Emitter Breakdown Voltage 25V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 7V
hFE Min 50
Continuous Collector Current 5A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $19.050720 $19.05072
10 $17.972377 $179.72377
100 $16.955073 $1695.5073
500 $15.995352 $7997.676
1000 $15.089955 $15089.955
DZT3150-13 Product Details

DZT3150-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 500mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltage should be kept at 5A for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.In this part, there is a transition frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 25V volts.During maximum operation, collector current can be as low as 5A volts.

DZT3150-13 Features


the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz

DZT3150-13 Applications


There are a lot of Diodes Incorporated DZT3150-13 applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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