R6011ENX Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 210 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 670pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11A continuous drain current (ID).Peak drain current is 22A, which is the maximum pulsed drain current.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

R6011ENX Features

the avalanche energy rating (Eas) is 210 mJ
a continuous drain current (ID) of 11A
based on its rated peak drain current 22A.
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)

R6011ENX Applications

There are a lot of ROHM Semiconductor
R6011ENX applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies