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APT56M60L

APT56M60L

APT56M60L

Microsemi Corporation

MOSFET N-CH 600V 56A TO-264

SOT-23

APT56M60L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 21 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish PURE MATTE TIN
Additional Feature FAST SWITCHING, AVALANCHE RATED
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 56A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1040W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.04kW
Turn On Delay Time 65 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 11300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 280nC @ 10V
Rise Time 75ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 190 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 30V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
34 $14.17147 $481.82998

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