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RCX200N20

RCX200N20

RCX200N20

ROHM Semiconductor

N-Channel Bulk 130m Ω @ 10A, 10V ±30V 1900pF @ 25V 40nC @ 10V 200V TO-220-3 Full Pack

SOT-23

RCX200N20 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.95
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.23W Ta 40W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 70A
Drain-source On Resistance-Max 0.0427Ohm
Pulsed Drain Current-Max (IDM) 140A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 396 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.570000 $1.57
10 $1.481132 $14.81132
100 $1.397294 $139.7294
500 $1.318202 $659.101
1000 $1.243587 $1243.587
RCX200N20 Product Details

RCX200N20 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 396 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 70A.There is a peak drain current of 140A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

RCX200N20 Features


the avalanche energy rating (Eas) is 396 mJ
a continuous drain current (ID) of 20A
based on its rated peak drain current 140A.
a 200V drain to source voltage (Vdss)


RCX200N20 Applications


There are a lot of ROHM Semiconductor
RCX200N20 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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