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RDN120N25FU6

RDN120N25FU6

RDN120N25FU6

ROHM Semiconductor

MOSFET N-CH 250V 12A TO-220FN

SOT-23

RDN120N25FU6 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature 150°C TJ
Packaging Bulk
Published 2006
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 210m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1224pF @ 10V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 12A
Drain to Source Breakdown Voltage 250V
RoHS Status ROHS3 Compliant

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