STD20N20T4

new-10%

Manufacturer part number:STD20N20T4

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 200V 18A DPAK

Case Package:SOT-23

Datasheet:STD20N20T4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Packaging	Tape & Reel (TR)
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-50°C
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	18A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STD20N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Voltage	200V
Power Dissipation-Max	90W Tc
Element Configuration	Single
Current	18A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	90W
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	125m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	940pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	18A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.125Ohm
Drain to Source Breakdown Voltage	200V
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	110 mJ
Nominal Vgs	3 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead