Welcome to Hotenda.com Online Store!

logo
userjoin
Home

TPCC8006-H(TE12LQM

TPCC8006-H(TE12LQM

TPCC8006-H(TE12LQM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 22A 8TSON

SOT-23

TPCC8006-H(TE12LQM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Supplier Device Package 8-TSON Advance (3.3x3.3)
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSVI-H
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 700mW Ta 27W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2.3V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 10V
Current - Continuous Drain (Id) @ 25°C 22A Ta
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 3.8ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9.7 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 2.2nF
Rds On Max 8 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

Related Part Number

IPD60R380C6
STD20N20T4
IXFH12N120
IXFH12N120
$0 $/piece
SI7668ADP-T1-GE3
NTD18N06G
NTD18N06G
$0 $/piece
BSS119 E7796
FQAF22P10
FQAF22P10
$0 $/piece
SI7160DP-T1-GE3
NDS355AN-F169
SI7476DP-T1-GE3

Get Subscriber

Enter Your Email Address, Get the Latest News