SI4483EDY-T1-GE3

new-10%

Manufacturer part number:SI4483EDY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 10A 8-SOIC

Case Package:SOT-23

Datasheet:SI4483EDY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	10 μs
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	10A Ta
Rise Time	20μs
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	50 μs
Turn-Off Delay Time	42 μs
Continuous Drain Current (ID)	-14A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	25V
Drain Current-Max (Abs) (ID)	10A
Drain to Source Breakdown Voltage	-30V
Nominal Vgs	3 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant