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RGTV60TS65DGC11

RGTV60TS65DGC11

RGTV60TS65DGC11

ROHM Semiconductor

650V 30A FIELD STOP TRENCH IGBT

SOT-23

RGTV60TS65DGC11 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 194W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 95ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 60A
Turn On Time 45 ns
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A
Turn Off Time-Nom (toff) 201 ns
IGBT Type Trench Field Stop
Gate Charge 64nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 33ns/105ns
Switching Energy 570μJ (on), 500μJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.01000 $5.01
10 $4.49600 $44.96
25 $4.25040 $106.26
100 $3.68360 $368.36
450 $3.49464 $1572.588
900 $3.13574 $2822.166
1,350 $2.64460 $2.6446

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