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STGWA30HP65FB2

  • STGWA30HP65FB2
  • STGWA30HP65FB2

STGWA30HP65FB2

STGWA30HP65FB2

STMicroelectronics

STGWA30HP65FB2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGWA30HP65FB2 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~175°C TJ
Series HB2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 167W
Reverse Recovery Time 140ns
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 50A
Test Condition 400V, 30A, 6.8 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 90nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C -/71ns
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.090000 $3.09
10 $2.915094 $29.15094
100 $2.750089 $275.0089
500 $2.594424 $1297.212
1000 $2.447569 $2447.569
STGWA30HP65FB2 Product Details

STGWA30HP65FB2 Description


The STGWA30HP65FB2 is a Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT. 



STGWA30HP65FB2 Features


  • Maximum junction temperature : TJ = 175 °C

  • Low VCE(sat) = 1.65 V(Typ.) @ IC = 30 A

  • Co-packaged protection diode

  • Minimized tail current

  • Tight parameter distribution

  • Low thermal resistance

  • Positive VCE(sat) temperature coefficient



STGWA30HP65FB2 Applications


  • Welding

  • Power factor correction


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