IXYB82N120C3H1

new-10%

Manufacturer part number:IXYB82N120C3H1

Manufacturer:IXYS

Description:IGBT 1200V 164A 1040W PLUS264

Case Package:SOT-23

Datasheet:IXYB82N120C3H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	264
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.04kW
Pin Count	3
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	1.04kW
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	29 ns
Power - Max	1040W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	192 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	164A
Reverse Recovery Time	420 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.75V
Turn On Time	119 ns
Test Condition	600V, 80A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 82A
Turn Off Time-Nom (toff)	295 ns
Gate Charge	215nC
Current - Collector Pulsed (Icm)	320A
Td (on/off) @ 25°C	29ns/192ns
Switching Energy	4.95mJ (on), 2.78mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Height	26.59mm
Length	20.29mm
Width	5.31mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free