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IXYH82N120C3

IXYH82N120C3

IXYH82N120C3

IXYS

IGBT 1200V 200A 1250W TO247AD

SOT-23

IXYH82N120C3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series GenX3™, XPT™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.25kW
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1.04kW
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 29 ns
Power - Max 1250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 192 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 200A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.75V
Turn On Time 119 ns
Test Condition 600V, 80A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 82A
Turn Off Time-Nom (toff) 295 ns
Gate Charge 215nC
Current - Collector Pulsed (Icm) 380A
Td (on/off) @ 25°C 29ns/192ns
Switching Energy 4.95mJ (on), 2.78mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 21.46mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $17.342669 $17.342669
10 $16.361008 $163.61008
100 $15.434914 $1543.4914
500 $14.561239 $7280.6195
1000 $13.737018 $13737.018

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