RGW60TS65DGC11

new-10%

Manufacturer part number:RGW60TS65DGC11

Manufacturer:ROHM Semiconductor

Description:650V 30A FIELD STOP TRENCH IGBT

Case Package:SOT-23

Datasheet:RGW60TS65DGC11 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Input Type	Standard
Power - Max	178W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	92ns
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	60A
Turn On Time	50 ns
Test Condition	400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 30A
Turn Off Time-Nom (toff)	209 ns
IGBT Type	Trench Field Stop
Gate Charge	84nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	37ns/114ns
Switching Energy	480μJ (on), 490μJ (off)
RoHS Status	ROHS3 Compliant