RSD200N10TL

new-10%

Manufacturer part number:RSD200N10TL

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 100V 20A CPT3

Case Package:SOT-23

Datasheet:RSD200N10TL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	TIN COPPER
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	20W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	20W
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	52m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	48.5nC @ 10V
Rise Time	61ns
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Fall Time (Typ)	193 ns
Turn-Off Delay Time	128 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.059Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	80A
Avalanche Energy Rating (Eas)	85 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant