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RUE003N02TL

RUE003N02TL

RUE003N02TL

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1 Ω @ 300mA, 4V ±8V 25pF @ 10V SC-75, SOT-416

SOT-23

RUE003N02TL Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Power Dissipation-Max 150mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150mW
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 300mA, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4V
Vgs (Max) ±8V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 300mA
Threshold Voltage 300mV
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 1.4Ohm
Drain to Source Breakdown Voltage 20V
Nominal Vgs 300 mV
Height 700μm
Length 1.6mm
Width 800μm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.328195 $0.328195
10 $0.309618 $3.09618
100 $0.292093 $29.2093
500 $0.275559 $137.7795
1000 $0.259961 $259.961
RUE003N02TL Product Details

RUE003N02TL Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 25pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 300mA.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.300mV is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (1.8V 4V) reduces this device's overall power consumption.

RUE003N02TL Features


a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 15 ns
a threshold voltage of 300mV


RUE003N02TL Applications


There are a lot of ROHM Semiconductor
RUE003N02TL applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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