Welcome to Hotenda.com Online Store!

logo
userjoin
Home

STW34NM60N

STW34NM60N

STW34NM60N

STMicroelectronics

STW34NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STW34NM60N Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™ II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 105MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 225
Base Part Number STW34N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 210W
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2722pF @ 100V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 34ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 106 ns
Continuous Drain Current (ID) 29A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
DS Breakdown Voltage-Min 600V
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.23000 $10.23
30 $8.50867 $255.2601
120 $7.74300 $929.16
510 $6.59459 $3363.2409
1,020 $5.82900 $5.829
STW34NM60N Product Details

STW34NM60N Description


The STW34NM60N device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.



STW34NM60N Features


  • 100% avalanche tested

  • Low input capacitance and gate charge

  • Low gate input resistance

  • ROHS3 Compliant

  • No SVHC

  • Lead Free



STW34NM60N Applications


  • Switching applications

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News