STW34NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STW34NM60N Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
105MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
225
Base Part Number
STW34N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
250W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
210W
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
105m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2722pF @ 100V
Current - Continuous Drain (Id) @ 25°C
29A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Rise Time
34ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
70 ns
Turn-Off Delay Time
106 ns
Continuous Drain Current (ID)
29A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
25V
DS Breakdown Voltage-Min
600V
Height
20.15mm
Length
15.75mm
Width
5.15mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$10.23000
$10.23
30
$8.50867
$255.2601
120
$7.74300
$929.16
510
$6.59459
$3363.2409
STW34NM60N Product Details
STW34NM60N Description
The STW34NM60N device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.