NTD20N03L27-1G

new-10%

Manufacturer part number:NTD20N03L27-1G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 20A IPAK

Case Package:SOT-23

Datasheet:NTD20N03L27-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	20A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.75W Ta 74W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	74W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 10A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1260pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	18.9nC @ 10V
Rise Time	137ns
Drive Voltage (Max Rds On,Min Rds On)	4V 5V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	60A
Avalanche Energy Rating (Eas)	288 mJ
Nominal Vgs	1.6 V
RoHS Status	RoHS Compliant
Lead Free	Lead Free