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UMT4401U3HZGT106

  • UMT4401U3HZGT106
  • UMT4401U3HZGT106

UMT4401U3HZGT106

UMT4401U3HZGT106

ROHM Semiconductor

UMT4401U3HZGT106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

UMT4401U3HZGT106 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 250MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.512000 $0.512
10 $0.483019 $4.83019
100 $0.455678 $45.5678
500 $0.429885 $214.9425
1000 $0.405552 $405.552
UMT4401U3HZGT106 Product Details

UMT4401U3HZGT106 Overview


In this device, the DC current gain is 100 @ 150mA 1V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Device displays Collector Emitter Breakdown (40V maximal voltage).

UMT4401U3HZGT106 Features


the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA

UMT4401U3HZGT106 Applications


There are a lot of ROHM Semiconductor UMT4401U3HZGT106 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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