IRF7329TRPBF            Description

 Intrative Rectifier's new P-channel HEXFET power MOSFET uses advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with the well-known rugged device design of HEXFET Power MOSFET, provides designers with an extremely efficient and reliable device for use in a variety of applications.Over the years, SO-8 has been improved through customized thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications.With these improvements multiple devices that can be used to greatly reduce circuit board space. The package is designed for gas phase, infrared or wave soldering technology.

IRF7329TRPBF            Features

 Trench Technology

 Ultra Low On-Resistance

 Dual P-Channel MOSFET

 Low Profile (<1.8mm)

 Available in Tape & Reel

 Lead-Free

IRF7329TRPBF               Applications

making it an ideal choice for a variety of power applications