IRF7313TRPBF

new-10%

Manufacturer part number:IRF7313TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET 2N-CH 30V 6.5A 8-SOIC

Case Package:SOT-23

Datasheet:IRF7313TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	29mOhm
Additional Feature	HIGH RELIABILITY, AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Max Power Dissipation	2W
Terminal Form	GULL WING
Current Rating	6.5A
Base Part Number	IRF7313PBF
Number of Elements	2
Row Spacing	6.3 mm
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	8.1 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	29m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Rise Time	8.9ns
Fall Time (Typ)	17 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	6.5A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	30A
Dual Supply Voltage	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Recovery Time	68 ns
Max Junction Temperature (Tj)	150°C
FET Feature	Standard
Nominal Vgs	1 V
Height	1.75mm
Length	4.9784mm
Width	4.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free