US6T6TR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
US6T6TR Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
TIN COPPER
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
1W
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Current Rating
-2A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
US6T
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power - Max
1W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
360MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 200mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
180mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
360MHz
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.368179
$0.368179
10
$0.347338
$3.47338
100
$0.327678
$32.7678
500
$0.309130
$154.565
1000
$0.291632
$291.632
US6T6TR Product Details
US6T6TR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 270 @ 200mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 360MHz.Input voltage breakdown is available at 30V volts.Collector current can be as low as 2A volts at its maximum.
US6T6TR Features
the DC current gain for this device is 270 @ 200mA 2V the vce saturation(Max) is 180mV @ 50mA, 1A the emitter base voltage is kept at 6V the current rating of this device is -2A a transition frequency of 360MHz
US6T6TR Applications
There are a lot of ROHM Semiconductor US6T6TR applications of single BJT transistors.