VT6K1T2CR

new-10%

Manufacturer part number:VT6K1T2CR

Manufacturer:ROHM Semiconductor

Description:MOSFET 2N-CH 20V 0.1A VMT6

Case Package:SOT-23

Datasheet:VT6K1T2CR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Cut Tape (CT)
Published	2011
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Max Power Dissipation	120mW
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	6
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	5 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	7.1pF @ 10V
Rise Time	4ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	100mA
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.1A
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate, 1.2V Drive
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free