SI7904BDN-T1-E3

new-10%

Manufacturer part number:SI7904BDN-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 20V 6A 1212-8

Case Package:SOT-23

Datasheet:SI7904BDN-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	30mOhm
Terminal Finish	PURE MATTE TIN
Subcategory	FET General Purpose Powers
Max Power Dissipation	17.8W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	SI7904
Pin Count	8
JESD-30 Code	S-XDSO-C6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	2 N-Channel (Dual)
Transistor Application	AMPLIFIER
Rds On (Max) @ Id, Vgs	30m Ω @ 7.1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	860pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	24nC @ 8V
Rise Time	15ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	6A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.04mm
Length	3.05mm
Width	3.05mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free