2ST1480FP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
2ST1480FP Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Max Power Dissipation
25W
Terminal Position
SINGLE
Frequency
120MHz
Base Part Number
2ST14
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
25W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
120MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
170 @ 500mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 300mA, 3A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
120MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2ST1480FP Product Details
2ST1480FP Overview
This device has a DC current gain of 170 @ 500mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
2ST1480FP Features
the DC current gain for this device is 170 @ 500mA 5V the vce saturation(Max) is 1V @ 300mA, 3A the emitter base voltage is kept at 5V a transition frequency of 120MHz
2ST1480FP Applications
There are a lot of STMicroelectronics 2ST1480FP applications of single BJT transistors.