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BD237

BD237

BD237

STMicroelectronics

BD237 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

BD237 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 25W
Current Rating 2A
Frequency 3MHz
Base Part Number BD237
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 25W
Case Connection ISOLATED
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 600mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
VCEsat-Max 0.6 V
Height 10.8mm
Length 7.8mm
Width 2.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.88000 $0.88
50 $0.74380 $37.19
100 $0.61100 $61.1
500 $0.50474 $252.37
1,000 $0.39848 $0.39848
2,500 $0.37191 $0.74382
5,000 $0.35420 $1.771
BD237 Product Details

BD237 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.In this part, there is a transition frequency of 3MHz.In extreme cases, the collector current can be as low as 2A volts.

BD237 Features


the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz

BD237 Applications


There are a lot of STMicroelectronics BD237 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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