BULB7216T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BULB7216T4 Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
80W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
BULB721
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
700V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
4 @ 2A 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
3V @ 80mA, 800mA
Collector Emitter Breakdown Voltage
700V
Emitter Base Voltage (VEBO)
12V
hFE Min
7
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BULB7216T4 Product Details
BULB7216T4 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 4 @ 2A 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 80mA, 800mA.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.During maximum operation, collector current can be as low as 3A volts.
BULB7216T4 Features
the DC current gain for this device is 4 @ 2A 5V the vce saturation(Max) is 3V @ 80mA, 800mA the emitter base voltage is kept at 12V
BULB7216T4 Applications
There are a lot of STMicroelectronics BULB7216T4 applications of single BJT transistors.