MJ802 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
MJ802 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount, Through Hole
Mounting Type
Chassis Mount
Package / Case
TO-204AA, TO-3
Number of Pins
2
Transistor Element Material
SILICON
Operating Temperature
200°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
90V
Max Power Dissipation
200W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Current Rating
30A
Frequency
2MHz
Base Part Number
MJ80
Pin Count
2
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
2MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
90V
Max Collector Current
30A
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 7.5A 2V
Current - Collector Cutoff (Max)
1mA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 750mA, 7.5A
Collector Emitter Breakdown Voltage
90V
Transition Frequency
2MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
4V
hFE Min
25
VCEsat-Max
0.8 V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
400
$2.75448
$1101.792
MJ802 Product Details
MJ802 Description
The MJ802 is a silicon Epitaxial-Base power transistor that is housed in a Jedec TO-3 metal casing. It is designed to be used in general-purpose power amplifiers and switching applications.