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SCTW35N65G2VAG

  • SCTW35N65G2VAG
  • SCTW35N65G2VAG

SCTW35N65G2VAG

SCTW35N65G2VAG

STMicroelectronics

SCTW35N65G2VAG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

SCTW35N65G2VAG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~200°C TJ
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Reach Compliance Code compliant
Power Dissipation-Max 240W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 67m Ω @ 20A, 20V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 400V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Gate Charge (Qg) (Max) @ Vgs 73nC @ 20V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 18V 20V
Vgs (Max) +22V, -10V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $20.40000 $20.4
500 $20.196 $10098
1000 $19.992 $19992
1500 $19.788 $29682
2000 $19.584 $39168
2500 $19.38 $48450
SCTW35N65G2VAG Product Details

SCTW35N65G2VAG Description


ST's superior and revolutionary 2nd generation SiC MOSFET technology was used to build the SCTW35N65G2VAG silicon carbide Power MOSFET, which has a surprisingly low on-resistance per unit area and very strong switching performance.



SCTW35N65G2VAG Features


  • The very fast and robust intrinsic body diode

  • Low capacitance

  • AEC-Q101 qualified



SCTW35N65G2VAG Applications


  • Switching mode power supply

  • EV chargers

  • DC-DC converters


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