STB120N10F4

new-10%

Manufacturer part number:STB120N10F4

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 100V D2PAK

Case Package:SOT-23

Datasheet:STB120N10F4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	STB120N
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Transistor Application	SWITCHING
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Polarity/Channel Type	N-CHANNEL
Drain Current-Max (Abs) (ID)	120A
Drain-source On Resistance-Max	0.01Ohm
Pulsed Drain Current-Max (IDM)	390A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	215 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
RoHS Status	ROHS3 Compliant