STB200NF04T4

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STB200NF04T4

Manufacturer part number:STB200NF04T4

Manufacturer:STMicroelectronics

Description:STB200NF04T4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STB200NF04T4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Cut Tape (CT)
Series	STripFET™ II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	3.7MOhm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Voltage - Rated DC	40V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	120A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB200N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	310W
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.7m Ω @ 90A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	210nC @ 10V
Rise Time	320ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	120 ns
Turn-Off Delay Time	140 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	480A
Height	4.6mm
Length	10.4mm
Width	9.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free