FDA18N50

new-10%

Manufacturer part number:FDA18N50

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 265m Ω @ 9.5A, 10V ±30V 2860pF @ 25V 60nC @ 10V TO-3P-3, SC-65-3

Case Package:SOT-23

Datasheet:FDA18N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	7 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	UniFET™
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	265MOhm
Terminal Finish	Tin (Sn)
Additional Feature	FAST SWITCHING
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	239W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	239W
Turn On Delay Time	55 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	265m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2860pF @ 25V
Current - Continuous Drain (Id) @ 25°C	19A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	165ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	90 ns
Turn-Off Delay Time	95 ns
Continuous Drain Current (ID)	19A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	76A
Avalanche Energy Rating (Eas)	945 mJ
Height	18.9mm
Length	15.8mm
Width	5mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free