STF13NK50Z

new-10%

Manufacturer part number:STF13NK50Z

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 480m Ω @ 6.5A, 10V ±30V 1600pF @ 25V 47nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:STF13NK50Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STF13
Pin Count	3
Number of Elements	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Case Connection	ISOLATED
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	480m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11A Tc
Gate Charge (Qg) (Max) @ Vgs	47nC @ 10V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	61 ns
Continuous Drain Current (ID)	6.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	11A
Drain-source On Resistance-Max	0.48Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	44A
Dual Supply Voltage	500V
Avalanche Energy Rating (Eas)	240 mJ
Nominal Vgs	3.75 V
Height	16.4mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant