SI4324DY-T1-E3

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Manufacturer part number:SI4324DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 36A 8-SOIC

Case Package:SOT-23

Datasheet:SI4324DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	3.2mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Power Dissipation-Max	3.5W Ta 7.8W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3510pF @ 15V
Current - Continuous Drain (Id) @ 25°C	36A Tc
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Rise Time	135ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	24A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	36A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	70A
Height	1.5494mm
Length	4.9784mm
Width	3.9878mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free