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STB8NM60T4

STB8NM60T4

STB8NM60T4

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1 Ω @ 2.5A, 10V ±30V 400pF @ 25V 18nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

STB8NM60T4 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series MDmesh™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 1Ohm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 5A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STB8N
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 100W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 100W
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 8A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 200 mJ
Nominal Vgs 4 V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.59181 $1.59181
STB8NM60T4 Product Details

STB8NM60T4 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 400pF @ 25V.This device has a continuous drain current (ID) of [8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 8A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 23 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).

STB8NM60T4 Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23 ns
a threshold voltage of 4V


STB8NM60T4 Applications


There are a lot of STMicroelectronics
STB8NM60T4 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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