STD1NK60T4

new-10%

STD1NK60T4

Manufacturer part number:STD1NK60T4

Manufacturer:STMicroelectronics

Description:Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R

Case Package:SOT-23

Datasheet:STD1NK60T4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Manufacturer Package Identifier	TO-252-P032P
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	8.5Ohm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	1A
Base Part Number	STD1NK
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Turn On Delay Time	6.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	156pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1A Tc
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	1A
Threshold Voltage	3V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	1A
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	4A
Avalanche Energy Rating (Eas)	25 mJ
Max Junction Temperature (Tj)	150°C
Height	2.63mm
Length	6.6mm
Width	6.2mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free