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NDS355AN-F169

NDS355AN-F169

NDS355AN-F169

ON Semiconductor

MOSFET (Metal Oxide) N-Channel 85m Ω @ 1.9A, 10V ±20V 195pF @ 15V 5nC @ 5V 30V TO-236-3, SC-59, SOT-23-3

SOT-23

NDS355AN-F169 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 month ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature -55°C~150°C TJ
Published 1998
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Vendor Undefined
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 500mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 85m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 5nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status RoHS Compliant
NDS355AN-F169 Product Details

NDS355AN-F169 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 195pF @ 15V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

NDS355AN-F169 Features


a 30V drain to source voltage (Vdss)


NDS355AN-F169 Applications


There are a lot of ON Semiconductor
NDS355AN-F169 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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