SI7476DP-T1-GE3

new-10%

Manufacturer part number:SI7476DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 40V 15A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7476DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Supplier Device Package	PowerPAK® SO-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	5.3mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	1.9W Ta
Element Configuration	Single
Power Dissipation	1.9W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	15A Ta
Gate Charge (Qg) (Max) @ Vgs	177nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	130 ns
Continuous Drain Current (ID)	25A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Drain to Source Resistance	5.3mOhm
Rds On Max	5.3 mΩ
RoHS Status	ROHS3 Compliant