2SK4017(Q)

new-10%

Manufacturer part number:2SK4017(Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:TOSHIBA 2SK4017(Q) MOSFET Transistor, N Channel, 5 A, 60 V, 100 mohm, 10 V, 2.5 V

Case Package:SOT-23

Datasheet:2SK4017(Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	52 Weeks
Contact Plating	Silver, Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2009
Series	U-MOSIII
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	20W Tc
Element Configuration	Single
Power Dissipation	20W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	100m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	730pF @ 10V
Current - Continuous Drain (Id) @ 25°C	5A Ta
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Fall Time (Typ)	4 ns
Continuous Drain Current (ID)	5A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Nominal Vgs	2.5 V
Height	5.5mm
Length	6.5mm
Width	2.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free