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SI1413DH-T1-GE3

SI1413DH-T1-GE3

SI1413DH-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 2.3A SC-70-6

SOT-23

SI1413DH-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6 (SOT-363)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Ta
Turn On Delay Time 13 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 115mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 100μA
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V
Rise Time 32ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 2.3A
Gate to Source Voltage (Vgs) 8V
Rds On Max 115 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant

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