STE30NK90Z

new-10%

Manufacturer part number:STE30NK90Z

Manufacturer:STMicroelectronics

Description:STE30NK90Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STE30NK90Z Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	260mOhm
Terminal Finish	Nickel (Ni)
Additional Feature	HIGH VOLTAGE
Subcategory	FET General Purpose Power
Voltage - Rated DC	900V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	30A
Base Part Number	STE30
Pin Count	4
Number of Elements	1
Power Dissipation-Max	500W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500W
Case Connection	ISOLATED
Turn On Delay Time	67 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	260m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	4.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	12000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	28A Tc
Gate Charge (Qg) (Max) @ Vgs	490nC @ 10V
Rise Time	59ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	72 ns
Turn-Off Delay Time	250 ns
Continuous Drain Current (ID)	14A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	28A
Drain to Source Breakdown Voltage	900V
Avalanche Energy Rating (Eas)	500 mJ
Height	9.1mm
Length	38.2mm
Width	25.5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free