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STE70NM60

STE70NM60

STE70NM60

STMicroelectronics

STE70NM60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STE70NM60 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case ISOTOP
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 55MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 70A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STE70
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 600W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 600W
Case Connection ISOLATED
Turn On Delay Time 55 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 266nC @ 10V
Rise Time 95ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 76 ns
Continuous Drain Current (ID) 70A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 280A
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $36.54000 $3654
STE70NM60 Product Details

STE70NM60 Description

MDmeshTM is a revolutionary MOSFET technology that combines the Multiple Drain process with PowerMESHTM's horizontal layout. STE70NM60 presents excellent avalanche characteristics, impressive DV/DT, and low on-resistance.


STE70NM60 Features

  • TYPICAL RDS(on) = 0.050|?

  • IMPROVED ESD CAPABILITY

  • INDUSTRY?ˉS LOWEST ON-RESISTANCE

  • TIGHT PROCESS CONTROL

  • HIGH dv/dt AND AVALANCHE CAPABILITIES

  • LOW GATE INPUT RESISTANCE

  • LOW INPUT CAPACITANCE AND GATE CHARGE


STE70NM60 Applications

  • The low current peripheral driver 

  • Control of IC inputs 

  • Replaces general-purpose transistors in digital applications


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