STE70NM60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STE70NM60 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
55MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
70A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STE70
Pin Count
4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
600W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
600W
Case Connection
ISOLATED
Turn On Delay Time
55 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
55m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
70A Tc
Gate Charge (Qg) (Max) @ Vgs
266nC @ 10V
Rise Time
95ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
76 ns
Continuous Drain Current (ID)
70A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
280A
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$36.54000
$3654
STE70NM60 Product Details
STE70NM60 Description
MDmeshTM is a revolutionary MOSFET technology that combines the Multiple Drain process with PowerMESHTM's horizontal layout. STE70NM60 presents excellent avalanche characteristics, impressive DV/DT, and low on-resistance.
STE70NM60 Features
TYPICAL RDS(on) = 0.050|?
IMPROVED ESD CAPABILITY
INDUSTRY?ˉS LOWEST ON-RESISTANCE
TIGHT PROCESS CONTROL
HIGH dv/dt AND AVALANCHE CAPABILITIES
LOW GATE INPUT RESISTANCE
LOW INPUT CAPACITANCE AND GATE CHARGE
STE70NM60 Applications
The low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications