FQA16N50

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Manufacturer part number:FQA16N50

Manufacturer:ON Semiconductor

Description:FQA16N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQA16N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	200W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	320mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V

Quantity	Unit Price	Ext. Price
1	$3.87000	$3.87
500	$3.8313	$1915.65
1000	$3.7926	$3792.6
1500	$3.7539	$5630.85
2000	$3.7152	$7430.4
2500	$3.6765	$9191.25

FQA16N50 Description

Using Fairchild's unique planar stripe, DMOS technology, power field effect transistors with the FQA16N50 N-Channel enhancement mode are created.

In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These gadgets are ideal for power factor correction, electronic lamp ballasts based on half-brides, and high efficiency switch mode power supplies.